isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.

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FAIRCHILD

仙童半导体

PNP SILICON TRANSISTOR

DESCRIPTION PN3565 is PNP silicon planar transistor designed for AF small signal amplifier stages.

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MICRO-ELECTRONICS

Small Signal Transistors

Small Signal Transistors TO-92 Case (Continued)

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CENTRAL