Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

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ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

POWER MOS V 400V 37A 0.120 Ohm

APT

晶科

POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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ADPOW

Standard Size Pushbuttons

General Specifications Electrical Capacity (Resistive Load) Power Level (silver): 3A @ 125V AC or 3A @ 250V AC or 3A @ 30V DC Logic Level (gold): 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V) Note: Find additional explanation of operating range in Supplement s

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NKK

恩楷楷

Compression Style Ring Tongue Terminal for 4/0 AWG Wire, Stud Size 1/2, Un-Plated, Barrel Length 19.05mm (.750)

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Molex

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