High Speed PT IGBT

Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature

文件：170.21 Kbytes 页数：9 Pages

Microsemi

美高森美

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature

文件：226.96 Kbytes 页数：9 Pages

ADPOW

High Speed PT IGBT

Microchip

微芯科技

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature

文件：226.96 Kbytes 页数：9 Pages

ADPOW

High Speed PT IGBT

Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature

文件：170.21 Kbytes 页数：9 Pages

Microsemi

美高森美

Power Semiconductors Power Modules RF Power MOSFETs

文件：9.86083 Mbytes 页数：44 Pages

Microsemi

美高森美

Power Semiconductors Power Modules

文件：2.83336 Mbytes 页数：44 Pages

Microsemi

美高森美

IGBT w/ anti-parallel diode

Microchip

微芯科技

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 45A 195W TO247

Microchip

微芯科技