N-Channel Enhancement Mode MOSFET

Features • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS= 10V RDS(ON) =14.5mΩ(typ.) @ VGS= 4.5V •High Density Cell Design •Reliable and Rugged •SO-8 Package Applications •Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：514.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS= 10V RDS(ON) =14.5mΩ(typ.) @ VGS= 4.5V •High Density Cell Design •Reliable and Rugged •SO-8 Package Applications •Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：514.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS= 10V RDS(ON) =14.5mΩ(typ.) @ VGS= 4.5V •High Density Cell Design •Reliable and Rugged •SO-8 Package Applications •Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：514.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested

文件：331.38 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

Advanced Process Technology

文件：284.34 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE GRADE

Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lat

文件：294.85 Kbytes 页数：13 Pages

IRF