APM4416KC-TRL

N-Channel Enhancement Mode MOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM4416KCTU

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM4416KC-TU

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM4416KC-TUL

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

CEM4416

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,9A,RDS(ON)=18mΩ@VGS=10V.RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CHM4416JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitching

CMPF4416A

SILICONN-CHANNELJFET

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPF4416AtypeisanepoxymoldedN-ChannelSiliconJunctionFieldEffectTransistormanufacturedinanSOT-23case,designedforVHFamplifierandmixerapplications.

CMS-4416A

SLIDESWITCHES(SMD)

CMS-4416B

SLIDESWITCHES(SMD)

CMS-4416C

SLIDESWITCHES(SMD)