CES2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-2.8A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=150mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CES2301A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CEV2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-1.3A,RDS(ON)=110mW@VGS=-4.5V. RDS(ON)=160mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-323package. RoHScompliant.

CEV2301A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-1.5A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-323package. RoHScompliant.

CHT2301PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.3Ampere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *

CHT2301WPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.3Ampere FEATURE ​​​​​​​*Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICAT

CJ2301

P-ChannelEnhancementModeMOSFET

CJ2301

P-Channel20-V(D-S)MOSFET

CJ2301B

P-Channel20-V(D-S)MOSFET

CJ2301-HF

MOSFET