C-2301G

2.24INCHSINGLEDIGITDISPLAY

C/A-2301XSINGLEDIGITDISPLAY 1.Alldimensionareinmillimeters(inches). 2.Toleranceis±0.25mm(0.01”)unlessotherwisespecified.

C-2301H

SINGLEDIGITDISPLAY

C-2301SR

SINGLEDIGITDISPLAY

C-2301UB-A

2.24INCHSINGLEDIGITDISPLAY

C-2301Y

SINGLEDIGITDISPLAY

C-2301Y

2.24INCHSINGLEDIGITDISPLAY

C/A-2301XSINGLEDIGITDISPLAY 1.Alldimensionareinmillimeters(inches). 2.Toleranceis±0.25mm(0.01”)unlessotherwisespecified.

CEN2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-2.7A,RDS(ON)=110mW@VGS=-4.5V. RDS(ON)=160mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Lead-freeplating;RoHScompliant.

CEN2301A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CES2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-2.8A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=150mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CES2301

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters