P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere FEATURE ​​​​​​​* Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICAT

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CHENMKO

力勤

P-Channel Enhancement Mode Field Effect Transistor

Chenmko

力勤

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes 页数：14 Pages

NSC

国半

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes 页数：14 Pages

NSC

国半

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

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NTE