P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -3A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：917.93 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -1.3A, RDS(ON) = 110mW @VGS = -4.5V. RDS(ON) = 160mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant.

文件：606.8 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -1.5A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant.

文件：519.96 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION *

文件：307.26 Kbytes 页数：3 Pages

CHENMKO

力勤