2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：96.7 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：100.02 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

APEC

富鼎先进

SMD 14-Pin Triple TTL Compatible Active Delay Lines

文件：41.8 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Complementary

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited

文件：166.89 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Schottky Barrier Diodes TM For Mixers and Detectors

DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest fre

文件：215.66 Kbytes 页数：6 Pages

Microsemi

美高森美