30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =50A - RDS(ON)

文件：1.38445 Mbytes 页数：7 Pages

APME

永源微电子

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level

文件：108.76 Kbytes 页数：11 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

文件：63.66 Kbytes 页数：7 Pages

PHI

PHI

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level

文件：108.76 Kbytes 页数：11 Pages

PHI

PHI