丝印：AP50P03DF；Package：PDFN3X3-8L；-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-50A - RDS(ON)

文件：857.28 Kbytes 页数：7 Pages

APME

永源微电子

-30V P-Channel Enhancement Mode MOSFET

APM

永源微

30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-50A - RDS(ON)

文件：1.23108 Mbytes 页数：7 Pages

APME

永源微电子

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：104.25 Kbytes 页数：4 Pages

CET

华瑞

P-Channel 30-V (D-S) MOSFET

文件：967.38 Kbytes 页数：8 Pages

VBSEMI

微碧半导体