Complementary Enhancement Mode Field Effect Transistor

General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pb-free (meets ROHS & Sony 259 specifications). AOP607L is a

文件：207.61 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP608 uses advanced trench technology MOSFETs to provide excellen and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a GreenPro

文件：142.67 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP608 uses advanced trench technology MOSFETs to provide excellen and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a GreenPro

文件：142.67 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb free (meets ROHS & Sony 259 specifications). AOP609L

文件：153.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb free (meets ROHS & Sony 259 specifications). AOP609L

文件：153.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

文件：145.24 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

文件：145.24 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

文件：137.68 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

文件：137.68 Kbytes 页数：7 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications). AOP800L is a Green Product order

文件：114.08 Kbytes 页数：4 Pages

AOSMD

万国半导体