600V, 15A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

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AOSMD

万国半导体

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

文件：884.99 Kbytes 页数：6 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.76 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • PFC stages • Power supply • Switching applications

文件：325.78 Kbytes 页数：2 Pages

ISC

无锡固电

600V 20A a MOS Power Transistor

General Description The AOK20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

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AOSMD

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600V 20A a MOS

General Description The AOK20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

文件：453.66 Kbytes 页数：6 Pages

AOSMD

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isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：422.13 Kbytes 页数：2 Pages

ISC

无锡固电

500V,22A N-Channel MOSFET

General Description The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts canbe ad

文件：441.45 Kbytes 页数：5 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：337.71 Kbytes 页数：2 Pages

ISC

无锡固电

600V 27A a MOS Power Transistor

General Description The AOK27S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

文件：249.65 Kbytes 页数：6 Pages

AOSMD

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