600V 27A a MOS

General Description The AOK27S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

文件：478.52 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 27A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.16Ω (Max) • 100 avalanche tested • Minimum

文件：405.84 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 29A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：422.26 Kbytes 页数：2 Pages

ISC

无锡固电

500V 29A a MOS Power Transistor

General Description The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

文件：244.72 Kbytes 页数：6 Pages

AOSMD

万国半导体

Trench gate Field-Stop IGBT

DESCRIPTION · 1200V, 40A · High Speed Switching · Low Power Loss APPLICATIONS · Welding Machines · UPS & Solar Inverters · Very High Switching Frequency Applications

文件：305.82 Kbytes 页数：2 Pages

ISC

无锡固电

1200V, 40A Alpha IGBT TM With Soft and Fast Recovery Anti-Parallel Diode

General Description • 1200V latest Alpha IGBT (αIGBT) technology • Very low VCE(sat) • High short-circuit ruggedness • Very low turn-on EMI • Easy paralleling capability • Low gate charge Qg • High efficiency and ruggedness in hard switching converters • Maximum junction temperature 175°C

文件：1.08792 Mbytes 页数：9 Pages

AOSMD

万国半导体

650V, 40A AlphaIGBTTM With soft and fast recovery anti-parallel diode

General Description • 650V breakdown voltage• Very high switching speed• Very low Vf and Qrr• Low turn-off switching loss and softness• Very good EMI behavior• Latest AlphaIGBT technology Applications • UPS• Solar Inverter• Welding

文件：539.1 Kbytes 页数：9 Pages

AOSMD

万国半导体

650V, 40A AlphaIGBTTM With soft and fast recovery anti-parallel diode

General Description • 650V breakdown voltage• High switching speed• Low Qrr• Low turn-off switching loss and softness• Very good EMI behavior• Latest AlphaIGBT technology Applications • PFC application for air-conditioners• Solar inverter• Welding machines

文件：523.72 Kbytes 页数：8 Pages

AOSMD

万国半导体

600V 39A a MOS Power Transistor

General Description The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be

文件：275.08 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 39A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：338.41 Kbytes 页数：2 Pages

ISC

无锡固电