600V 39A a MOS

General Description The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be

文件：507.41 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

文件：406.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET

FEATURES · Drain Current -ID= 47A@ TC=25℃ · Drain Source Voltage -VDSS=650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.099Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：612.32 Kbytes 页数：5 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 53A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.07Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：422.12 Kbytes 页数：2 Pages

ISC

无锡固电

null600V 53A 慣 MOS Power Transistor

General Description The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

文件：219.71 Kbytes 页数：6 Pages

AOSMD

万国半导体

100V N-Channel AlphaSGTTM

General Description • Trench Power MOSFET - AlphaSGTTM technology • Extremely Low RDS(ON) • Optimized switching performance • 175°C operating temperature • RoHS and Halogen-Free Compliant Applications Telecom DC-DC Industrial power Load switch

文件：583.68 Kbytes 页数：6 Pages

AOSMD

万国半导体

800V,7.4A N-Channel MOSFET

General Description The AOK8N80 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be ado

文件：310.46 Kbytes 页数：5 Pages

AOSMD

万国半导体

900V,10A N-Channel MOSFET

文件：297.64 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

文件：421.86 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：422.3 Kbytes 页数：2 Pages

ISC

无锡固电