600V 39A a MOS

General Description The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

文件：406.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET

FEATURES · Drain Current -ID= 47A@ TC=25℃ · Drain Source Voltage -VDSS=650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.099Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

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ISC

无锡固电

高压MOSFET (500V - 1000V)

600V 39A αMOS™ Power Transistor

AOS

美国万代