丝印：AOK；Package：8LdMSOP；Single Digitally Controlled Potentiometer (XDCP?? Low Noise, Low Power I2C Bus, 256 Taps

文件：1.39034 Mbytes 页数：13 Pages

RENESAS

瑞萨

丝印：K033V120X2；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS(ON) • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS =15V) • Low reverse recovery diode (Qrr) Applications Renewable • EV Charger • Solar Inverters Industrial • UPS • SMPS

文件：829.65 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K033V120X2Q；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：833.22 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K065V65X2；Package：TO-247-3L；650V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS =15V) for broad driver compatibility • Robust body diode and low Qrr Applications • Renewable • Industrial • EV Charger • UPS • Solar Inverters

文件：880.04 Kbytes 页数：9 Pages

AOSMD

万国半导体

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters

文件：473.61 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V,aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters

文件：475.17 Kbytes 页数：6 Pages

AOSMD

万国半导体

1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS = 15 V) for broad driver compatibility • Robust body diode and low Qrr Applications Renewable Industrial • EV Charger • UPS • Solar Inverters • SMPS • Motor Drives

文件：874.93 Kbytes 页数：9 Pages

AOSMD

万国半导体

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

文件：651.89 Kbytes 页数：9 Pages

AOSMD

万国半导体

1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) Applications Renewable Industrial • EV Charger • UPS • Solar Inverters • SMPS • Mot

文件：828.57 Kbytes 页数：9 Pages

AOSMD

万国半导体

1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：833.63 Kbytes 页数：9 Pages

AOSMD

万国半导体