丝印：K033V120X2；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS(ON) • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS =15V) • Low reverse recovery diode (Qrr) Applications Renewable • EV Charger • Solar Inverters Industrial • UPS • SMPS

文件：829.65 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K033V120X2Q；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：833.22 Kbytes 页数：9 Pages

AOSMD

万国半导体