丝印：AOI；Package：8LdMSOP；Low Noise, Low Power, 32 Taps Digitally Controlled Potentiometer (XDCP??

文件：715.77 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：AOI；Package：8LdMSOP；Low Noise, Low Power, 32 Taps Digitally Controlled Potentiometer (XDCP??

文件：715.77 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：IPAK；Package：TO-251；isc P-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：319.6 Kbytes 页数：2 Pages

ISC

无锡固电

600V 11A a MOS Power Transistor

General Description The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

文件：400.26 Kbytes 页数：7 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 54A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.45 Kbytes 页数：2 Pages

ISC

无锡固电

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：477.56 Kbytes 页数：6 Pages

AOSMD

万国半导体

700V, a MOS5 TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting

文件：671.96 Kbytes 页数：6 Pages

AOSMD

万国半导体

700V, a MOS5 TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting

文件：671.96 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Silver ATX,adapter,TV,lighting,Server power

文件：369.15 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.87 Kbytes 页数：2 Pages

ISC

无锡固电