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20S60FA

20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

20S60FA

20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

AOB20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB20S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB20S60L

600V20AaMOSTMPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20S60

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-247packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •PFCstages •Powersupply •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20S60L

600V20AaMOS

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20S60L

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT20S60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20S60L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20S60

600V20AaMOSPowerTransistor

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20S60

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF20S60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOTF20S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF20S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF20S60L

600V20AaMOS

GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

供应商型号品牌批号封装库存备注价格
AOS/万代
2018
TO-263
1600
原厂原货
询价
AOS/万代
23+
TO-263
50000
全新原装正品现货,支持订货
询价
AOS/万代
22+
TO-263
50000
只做原装假一罚十,欢迎咨询
询价
AOS/万代
2023+
TO-263
50000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
AOS/万代
2022+
TO-263
79999
询价
AOS/万代
23+
TO-263
6000
公司十几年如一日,只做原装正品,优势渠道保证每一片
询价
AOS
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
AOS/万代
23+
TO-263
10000
公司只做原装正品
询价
AOS/ 万代
TO-263
22+
6000
十年配单,只做原装
询价
AOS/ 万代
23+
TO-263
6000
原装正品,支持实单
询价
更多AOB20S60LIC供应商 更新时间2024-5-29 10:04:00