丝印：AO4832；Package：SOP-8；30V N-Channel MOSFET

Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

文件：438.23 Kbytes 页数：8 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4832；Package：SOP-8；30V Dual N-Channel MOSFET

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

文件：643.32 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：AO4832；Package：SOP-8；30V N-Channel MOSFET

Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

文件：438.23 Kbytes 页数：8 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4832；Package：SOP-8；30V Dual N-Channel MOSFET

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

文件：643.32 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：4832；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

文件：2.01129 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4832；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

RDs(ON)=16 mQ @VGS=10V RDS(ON) =20 mQ @VGS=4.5V Super high density cell design for extremely low RDs(ON) Exceptional on-resistance and maximum DC current capability

文件：5.66909 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4832；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

文件：2.70877 Mbytes 页数：5 Pages

KEXIN

科信电子

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

文件：114.89 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.89879 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-channel Enhancement Mode Power MOSFET

Features VDS= 30V, ID= 12 A RDS(ON)

文件：1.30216 Mbytes 页数：5 Pages

Bychip

百域芯