N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4478L uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications. -RoHS Compliant -Halogen Free Features VDS (V) = 30V ID = 9A (VGS = 10V) RDS(ON)

文件：212.5 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

文件：1.11927 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel MOSFET

文件：1.92668 Mbytes 页数：5 Pages

KEXIN

科信电子

SOT23, Low-Noise, Low-Distortion, Wide-Band, Rail-to-Rail Op Amps

文件：585.35 Kbytes 页数：15 Pages

Maxim

美信