丝印：4496；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4496/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically identical. -RoHS Compliant -AO4496L is Halogen Free Features VDS (V) = 3

文件：211.31 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：4496；Package：SO-8；30V N-Channel MOSFET

文件：299.12 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：167.16 Kbytes 页数：6 Pages

DIODES

美台半导体

Advanced PWM and Dual Linear Power Control

文件：323.59 Kbytes 页数：14 Pages

Intersil

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

文件：1.72108 Mbytes 页数：4 Pages

KEXIN

科信电子