P-Enhancement Field Effect Transistor

Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply

文件：985.9 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

30V P-Channel MOSFET

文件：503.25 Kbytes 页数：5 Pages

AOSMD

万国半导体

场效应管

Haochang

浩畅

中低压MOS

GOODWORK

固得沃克电子

P-Channel Enhancement Mode Power MOSFET

Techpublic

台舟电子

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

文件：725.9 Kbytes 页数：5 Pages

KERSEMI

丝印：X1PV；Package：SOT-23；P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

文件：1.87429 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：X1**；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

文件：127.1 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：1.047579 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

文件：1.34606 Mbytes 页数：4 Pages

KEXIN

科信电子