MULTI CABLE

文件：790.39 Kbytes 页数：1 Pages

SOVICO

丝印：AM1217S；Package：SOP16；Three Channels Power Driver

Features 1) Surface m ount package ( SOP 16) 2) Lower supply current 3) Lower VCC standby current 4) Lower MOSFETs On resistance 5) Over temperature protection 6) Over temperature protection recover 7) Over current protection (CH_B C)

文件：597.87 Kbytes 页数：13 Pages

AMTEK

晶致半导体

丝印：AM1219S；Package：SOP-16；Three Channels Power Driver

Features 1) Surface m ount package ( SOP 16) 2) Built in steady voltage output 3) Lower supply current 4) Lower VCC standby current 5) Lower MOSFETs On resistance 6) Over temperature protection 7) Over temperature protection recover 8) Over current protection (CH_B&

文件：614.3 Kbytes 页数：13 Pages

AMTEK

晶致半导体

丝印：AM1229D；Package：DFN-3X3；Three Channels Power Motor Driver

Features 1) Surface m ount package ( DFN 3X3) 2) Built in steady voltage output 3) Lower supply current 4) Lower VCC standby current 5) Lower MOSFETs On resistance 6) Over temperature protection 7) Over temperature protection recover 8) Over current protection (CH_B&

文件：469.75 Kbytes 页数：10 Pages

AMTEK

晶致半导体

P-Channel 60-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：279.34 Kbytes 页数：5 Pages

AnalogPower

P-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：309.11 Kbytes 页数：5 Pages

AnalogPower

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC HERMETIC PACKA

文件：35.08 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION The AM1214-130 is a rugged, Class C common base device designed as driver of AM1214-250 for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted di

文件：33.53 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMET

文件：95.01 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC HER

文件：57.53 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体