AM1214-100规格书供应商报价意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AM1214-100	文件：35.08 Kbytes Page：3 Pages	L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMIC HERMETIC PACKA 文件：35.08 Kbytes 页数：3 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HVV1214-100	文件：829.52 Kbytes Page：5 Pages	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10 Duty For Ground Based Radar Applications 文件：829.52 Kbytes 页数：5 Pages	HVVI	HVVI
HVV1214-100-EK	文件：829.52 Kbytes Page：5 Pages	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10 Duty For Ground Based Radar Applications 文件：829.52 Kbytes 页数：5 Pages	HVVI	HVVI
PH1214-100EL	文件：145.52 Kbytes Page：3 Pages	Radar Pulsed Power Transistor Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami 文件：145.52 Kbytes 页数：3 Pages	MA-COM	MA-COM

更多AM1214-100供应商更新时间2025-12-13 10:31:00