NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System

文件：253.58 Kbytes 页数：2 Pages

ASI

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ ME

文件：92.14 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS

ST

意法半导体

Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150關s Pulse, 10 Duty

文件：157.71 Kbytes 页数：4 Pages

MACOM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：157.71 Kbytes 页数：4 Pages

MA-COM

Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10 Duty

Features ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Package

文件：248.43 Kbytes 页数：4 Pages

MACOM