L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ ME

文件：64.97 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

丝印：AM1217S；Package：SOP16；Three Channels Power Driver

Features 1) Surface m ount package ( SOP 16) 2) Lower supply current 3) Lower VCC standby current 4) Lower MOSFETs On resistance 5) Over temperature protection 6) Over temperature protection recover 7) Over current protection (CH_B C)

文件：597.87 Kbytes 页数：13 Pages

AMTEK

晶致半导体

丝印：AM1219S；Package：SOP-16；Three Channels Power Driver

Features 1) Surface m ount package ( SOP 16) 2) Built in steady voltage output 3) Lower supply current 4) Lower VCC standby current 5) Lower MOSFETs On resistance 6) Over temperature protection 7) Over temperature protection recover 8) Over current protection (CH_B&

文件：614.3 Kbytes 页数：13 Pages

AMTEK

晶致半导体

丝印：AM1229D；Package：DFN-3X3；Three Channels Power Motor Driver

Features 1) Surface m ount package ( DFN 3X3) 2) Built in steady voltage output 3) Lower supply current 4) Lower VCC standby current 5) Lower MOSFETs On resistance 6) Over temperature protection 7) Over temperature protection recover 8) Over current protection (CH_B&

文件：469.75 Kbytes 页数：10 Pages

AMTEK

晶致半导体

MOSFET 650V, 12A N-CHANNEL

FEATURE • RDS(ON),typ.=0.60 Ω@VGS=10V • High Current Rating • Lower Capacitance • Lower Total Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM12N65 is available in TO-220 and TO220F Packages. APPLICATIONS • Adaptor • Charger • SMPS Standby Power

文件：940.86 Kbytes 页数：10 Pages

AITSEMI

创瑞科技

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

文件：1.3799 Mbytes 页数：19 Pages

AITSEMI

创瑞科技

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

文件：1.3799 Mbytes 页数：19 Pages

AITSEMI

创瑞科技

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

文件：1.3799 Mbytes 页数：19 Pages

AITSEMI

创瑞科技

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

文件：1.3799 Mbytes 页数：19 Pages

AITSEMI

创瑞科技

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

文件：1.3799 Mbytes 页数：19 Pages

AITSEMI

创瑞科技