RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTOR

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STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

ST

意法半导体

L-band radar LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina

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PHI

PHI

DIP8?

AM

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DIP8

DK东科

上传：深圳市乐创天科技有限公司