L-band radar LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base elimina

文件：79.3 Kbytes 页数：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

L-band radar LDMOS transistor

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

LDMOS L-band radar power transistor

文件：142.19 Kbytes 页数：12 Pages

恩XP

LDMOS L-band radar power transistor

恩XP

Package：SOT-502A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 75V 12DB SOT502A

Ampleon USA Inc.

Package：SOT-502A；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 75V 13DB SOT502A

Ampleon USA Inc.