AO3401

P-ChannelEnhancementModeFieldEffectTransistor

AO3401(4.2A)P-ChannelMOSFET P-ChannelEnhancementModeFieldEffectTransistor

AO3401

P-ChannelEnhancementModeMOSFET

Feature ●-30V/-4.2A,RDS(ON)=55mΩ(MAX)@VGS=-10V. RDS(ON)=70mΩ(MAX)@VGS=-4.5V. RDS(ON)=120mΩ(MAX)@VGS=-2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON) ●ReliableandRugged ●SOT-23forSurfaceMountPackage Applicati

AO3401

P-ChannelEnhancementMOSFET

■Features ●VDS(V)=-30V ●ID=-4.2A(VGS=-10V) ●RDS(ON)

AO3401

Plastic-EncapsulateMosfets

P-ChannelMOSFET FEATURES •TheAO3401usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V. •Thisdeviceissuitableforuseasaloadswitch orinPWMapplications.

AO3401

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

AO3401

P-ChannelEnhancementMOSFET

Features VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)

AO3401

P-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDs=-30V.ID=-4.2A RDS(ON)

AO3401

P-EnhancementFieldEffectTransistor

Features HighdensitycelldesignforultralowRDS(ON) Fullycharacterizedavalanchevoltageandcurrent Excellentpackageforgoodheatdissipation Applications Powerswitchingapplication Hardswitchedandhighfrequencycircuits Uninterruptiblepowersupply

AO3401A

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3401A/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasaloadswitchorothergeneralapplications.AO3401AandAO3401ALareelectricallyidentical. -RoHSComp

AO3401A

30VP-ChannelMOSFET