IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT - Power, Co-PAK, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

文件：512.87 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-4L 1200 V, 1.4 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Effici

文件：443.78 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

文件：670.94 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

文件：563.71 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.68 V, 60 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

文件：258.97 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Single N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 60 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

文件：247.85 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

文件：328.07 Kbytes 页数：2 Pages

ISC

无锡固电

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC=25A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

文件：342.48 Kbytes 页数：2 Pages

ISC

无锡固电