IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

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IGBT - Automotive Grade 1200 V 40 A

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft • AEC Q101 qualified\n• Tight Parameter distribution\n• Low Vcesat\n• Low Eoff & Eon;

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IGBT - Ultra Field Stop 1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor drive

文件：438.77 Kbytes 页数：11 Pages

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IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), NON SCR, TO247-4L 1200 V, 1.7 V, 40 A

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGH4L40T120SWD device offers the optimum performance with low switching and conduction losses for high efficiency operations in various applications like Solar, UPS and ESS. Features • Maxim

文件：391.15 Kbytes 页数：9 Pages

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