AFGH4L60T120RWD-STD中文资料安森美半导体数据手册PDF规格书

厂商型号	AFGH4L60T120RWD-STD
功能描述	IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.68 V, 60 A
文件大小	258.97 Kbytes
页面数量	9 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-25 15:20:00
人工找货	AFGH4L60T120RWD-STD价格和库存，欢迎联系客服免费人工找货

Description

Using the novel field stop 7th generation IGBT technology and the

Gen7 Diode in TO247 4−lead package, this device offers good

performance with low on state voltage and low switching losses for

both hard and soft switching topologies in automotive applications.

Features

 Extremely Efficient Trench with Field Stop Technology

 Maximum Junction Temperature − TJ =175C

 Short Circuit Rated and Low Saturation Voltage

 Fast Switching and Tightened Parameter Distribution

 AEC−Q101 Qualified, PPAP Available Upon Request

 This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

Applications

 Automotive E−compressor / Automotive EV PTC Heater / OBC