AFGH4L60T120RW-STD中文资料安森美半导体数据手册PDF规格书

厂商型号	AFGH4L60T120RW-STD
功能描述	IGBT – Power, Single N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 60 A
文件大小	247.85 Kbytes
页面数量	8 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-25 15:20:00
人工找货	AFGH4L60T120RW-STD价格和库存，欢迎联系客服免费人工找货

Description

Using the novel field stop 7th generation IGBT technology in

TO247 4−lead package, this device offers good performance with low

on state voltage and low switching losses for both hard and soft

switching topologies in automotive applications.

Features

 Extremely Efficient Trench with Field Stop Technology

 Maximum Junction Temperature − TJ =175C

 Short Circuit Rated and Low Saturation Voltage

 Fast Switching and Tightened Parameter Distribution

 AEC−Q101 Qualified, PPAP Available Upon Request

 This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

Applications

 Automotive E−compressor / Automotive EV PTC Heater / OBC