IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

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丝印：40T65SQDN；Package：D2PAK；IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes 页数：9 Pages

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安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

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安森美半导体

IGBT, 650V FS4 High speed version, for OBC application in D2pak

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications. • AEC-Q101 qualified\n• For automotive\n• VCE(sat) = 1.6 V (typ.) @ IC = 40 A\n• Low conduction loss\n• Low VF soft recovery co-packaged diode\n• Low noise and conduction loss;

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安森美半导体