AFGB40T65SQDN

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features MaximumJunctionTemperature:TJ=175C HighSpeedSwitchingSeries VCE(sat)=1.6V(Typ.)@IC=40A 100%ofthePartareDynamicallyTested(Note1) AEC−Q101Qualified TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications AutomotiveOnBoard

AFGB40T65SQDN

Marking：40T65SQDN；Package：D2PAK；IGBT for Automotive Applications, 650 V, 40 A, D2PAK

AFGB40T65SQDN_V01

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features MaximumJunctionTemperature:TJ=175C HighSpeedSwitchingSeries VCE(sat)=1.6V(Typ.)@IC=40A 100%ofthePartareDynamicallyTested(Note1) AEC−Q101Qualified TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications AutomotiveOnBoard

AFGHL40T65RQDN

IGBTforAutomotiveApplication650V,40A

UsingnovelfieldstopIGBTtechnology,onsemi’snewseriesof FS4IGBTsoffertheoptimumperformanceforautomotive applications.ThistechnologyisShortcircuitratedandoffershigh figureofmeritwithlowconductionandswitchinglosses. Features •MaximumJunctionTemperature:TJ=17

AFGHL40T65SPD

FieldStopTrenchIGBT40A,650V

Description Usingthenovelfieldstop3rdgenerationIGBTtechnology, AFGHL40T65SPDofferstheoptimumperformancewithbothlow conductionlossandswitchinglossforahighefficiencyoperationin variousapplications,whichprovides50Vhigherblockingvoltage andruggedhighcurrentswi

AFGHL40T65SPD

FieldStopTrenchIGBT

AFGHL40T65SQ

FieldStopTrenchIGBT40A,650V

AFGHL40T65SQD

FieldStopTrenchIGBT40A,650V

AM40T65

650V40AIGBTMOSFET

DESCRIPTION TheAM40T65isavailableinTO-3PNpackage. FEATURE FastSwitching Positivetemperaturecoefficient Fastrecoveryanti-paralleldiode APPLICATION Weldingconverters UPS Aircondition

AM40T65TXU

650V40AIGBTMOSFET

DESCRIPTION TheAM40T65isavailableinTO-3PNpackage. FEATURE FastSwitching Positivetemperaturecoefficient Fastrecoveryanti-paralleldiode APPLICATION Weldingconverters UPS Aircondition