丝印：AFG；Package：VSSOP；REGULATED 3.3 V, LOW-RIPPLE CHARGE PUMP WITH ULTRALOW OPERATING CURRENT

features Regulated 3.3-V Output Voltage From a 1.8-V to 3.6-V Input Voltage Range UltraLow Operating Current in Snooze Mode, Typical 2 μA Less Than 5-mV(PP) Output Voltage Ripple Achieved With Push-Pull Topology Integrated Low-Battery and Power-Good Detector Switching Frequency Can Be Syn

文件：793.17 Kbytes 页数：28 Pages

TI

德州仪器

丝印：AFG；Package：VSSOP；REGULATED 3.3 V, LOW-RIPPLE CHARGE PUMP WITH ULTRALOW OPERATING CURRENT

features Regulated 3.3-V Output Voltage From a 1.8-V to 3.6-V Input Voltage Range UltraLow Operating Current in Snooze Mode, Typical 2 μA Less Than 5-mV(PP) Output Voltage Ripple Achieved With Push-Pull Topology Integrated Low-Battery and Power-Good Detector Switching Frequency Can Be Syn

文件：793.17 Kbytes 页数：28 Pages

TI

德州仪器

丝印：AFG；Package：VSSOP；REGULATED 3.3 V, LOW-RIPPLE CHARGE PUMP WITH ULTRALOW OPERATING CURRENT

features Regulated 3.3-V Output Voltage From a 1.8-V to 3.6-V Input Voltage Range UltraLow Operating Current in Snooze Mode, Typical 2 μA Less Than 5-mV(PP) Output Voltage Ripple Achieved With Push-Pull Topology Integrated Low-Battery and Power-Good Detector Switching Frequency Can Be Syn

文件：793.17 Kbytes 页数：28 Pages

TI

德州仪器

丝印：AFG；Package：VSSOP；REGULATED 3.3 V, LOW-RIPPLE CHARGE PUMP WITH ULTRALOW OPERATING CURRENT

features Regulated 3.3-V Output Voltage From a 1.8-V to 3.6-V Input Voltage Range UltraLow Operating Current in Snooze Mode, Typical 2 μA Less Than 5-mV(PP) Output Voltage Ripple Achieved With Push-Pull Topology Integrated Low-Battery and Power-Good Detector Switching Frequency Can Be Syn

文件：793.17 Kbytes 页数：28 Pages

TI

德州仪器

丝印：AFGY160T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

文件：2.64198 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：AFGY120T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

文件：1.60511 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：AFGY160T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

文件：2.58508 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：30T65SQDN；Package：D2PAK；IGBT for Automotive Applications

文件：235.33 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：40T65SQDN；Package：D2PAK；IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：40T65SQ；Package：TO-247-3L；Field Stop Trench IGBT 40A, 650V

文件：255.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体