Trench Power MOSFET

Alfa-MOS

闸能

Low Noise JFET Amplifiers

文件：654.75 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

文件：207.8 Kbytes 页数：7 Pages

AOSMD

万国半导体

N- and P-Channel V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：2.06917 Mbytes 页数：10 Pages

VBSEMI

微碧半导体