AFBR-1012数据表ic资料批发供应第6页-114ic电子网

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零件型号	下载订购	功能描述	制造商上传企业	LOGO
CEB1012L	文件：379.91 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CED1012	文件：379.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CED1012L	文件：695.69 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CEP1012	文件：498.1 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CEP1012L	文件：497.34 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldTransistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET

更多AFBR-1012供应商更新时间2025-7-29 15:53:00