CEP1012L

N-Channel Enhancement Mode Field Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CEP1012L_07

N-Channel Enhancement Mode Field Effect Transistor

CEU1012

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU1012L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CFA1012

PNPSILICONPLANARPOWERTRANSISTOR

PNPSILICONPLANARPOWERTRANSISTOR TO-220FPFullyIsolatedPlasticPackage ComplementaryCFC2562 HighCurrentSwitchingApplications

CFP-1012TB

PIANOSWITCHES(FULLPITCH)

CHM1012LPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE120VoltsCURRENT10Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM1012PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CJ1012

N-ChannelPowerMOSFET

CJ1012

SOT-523Plastic-EncapsulateMOSFETS