P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：293.81 Kbytes 页数：4 Pages

ADV

爱德微

MOSFET

ADV

爱德微

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) =32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =50mW @VGS = -4.5V. Lead free product is acquired.

文件：617.68 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：399.79 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) =32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =50mW @VGS = -4.5V. Lead free product is acquired.

文件：617.68 Kbytes 页数：4 Pages

CET-MOS

华瑞