N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04Q uses advanced trench technology and design to provide excellent RDS(ON) wit

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丝印：ADM200N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06 series MOSFETs is a new technology, which combines an innovative super junct

文件：1.10957 Mbytes 页数：6 Pages

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丝印：ADM200N06G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06G series MOSFETs is a new technology, which combines an innovative super junc

文件：1.10951 Mbytes 页数：6 Pages

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MOSFET

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MOSFET

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