ADM200N04Q

N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM200N04QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)wit

DI200N04PQ

N-ChannelPowerMOSFETN-KanalLeistungs-MOSFET

Features Lowprofile,spacesavingpackage StandardLevelGateDriver Lowonstateresistance Fastswitchingtimes Lowgatecharge Avalancherated ComplianttoRoHS(exemp.7a) REACH,ConflictMinerals1)

FIR200N04PG

N-ChannelEnhancementModePowerMosfet

FMG200N04Z

N-ChannelMOSFET

Features SGTLVMOSFETtechnology ExcellentQg*Ronproduct(FOM) Extremelylowon-resistance(Ron) Application Batterymanagement Highcurrentswitching UPS

HMS200N04D

N-ChannelSuperTrenchPowerMOSFET

LMPC200N04

N-ChannelSuperTrenchPowerMOSFET