CEM9956A

DualN-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC

CEM9956A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,3.7A,RDS(ON)=80mΩ@VGS=10V.RDS(ON)=110mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CHM9956AJPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT48Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. CONSTRUCTION *N-Ch

IRF9956

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

IRF9956

PowerMOSFET(Vdss=30V,Rds(on)=0.10ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF9956PBF

ULTRALOWONTESISTANCE

IRF9956PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF9956TR

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

IRF9956TRPBF

ULTRALOWONTESISTANCE

NDS9956

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit