丝印：ACT；Package：DO-214AC；Transient Voltage Suppressor

Features: • Optimized for LAN Protection Applications • Low Profile Package With Built-In Strain Relief For Surface Mounted Applications • Low Incremental Surge Resistance, Excellent Clamping Capability • 400W Peak Pulse Power Capability with a 10/1,000μs Wave Form, Repetition Rate (duty cycle

文件：531.36 Kbytes 页数：5 Pages

MULTICOMP

易络盟

丝印：ACT；Package：SOT23-3；Very Low Supply Current 3-Pin Microprocessor Reset Monitors

文件：105.88 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：ACT；Package：SMA；Transient Voltage Suppressor

文件：775.25 Kbytes 页数：7 Pages

BILIN

银河微电

丝印：ACT；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：975.32 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器