CD74ACT10M96芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
CD74ACT10M	文件：462.81 Kbytes Page：13 Pages	丝印：ACT10M；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATES Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, 文件：462.81 Kbytes 页数：13 Pages	TI2 德州仪器	TI2
CD74ACT10M96	文件：462.81 Kbytes Page：13 Pages	丝印：ACT10M；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATES Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, 文件：462.81 Kbytes 页数：13 Pages	TI2 德州仪器	TI2
CD74ACT10M96.A	文件：462.81 Kbytes Page：13 Pages	丝印：ACT10M；Package：SOIC；TRIPLE 3-INPUT POSITIVE-NAND GATES Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, 文件：462.81 Kbytes 页数：13 Pages	TI2 德州仪器	TI2

更多ACT10M供应商更新时间2025-8-8 15:08:00