丝印：ACT112M；Package：SOIC；DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays 24-mA Output Drive Current Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, Me

文件：323.94 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ACT112M；Package：SOIC；DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays 24-mA Output Drive Current Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, Me

文件：323.94 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ACT112M；Package：SOIC；DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays 24-mA Output Drive Current Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, Me

文件：323.94 Kbytes 页数：12 Pages

TI

德州仪器