丝印：ACT153M；Package：SOIC；DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883

文件：653.85 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ACT153M；Package：SOIC；DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883

文件：653.85 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ACT153M；Package：SOIC；DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883

文件：653.85 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ACT153M；Package：SOP；DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883

文件：653.85 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ACT153M；Package：SOP；DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883

文件：653.85 Kbytes 页数：18 Pages

TI

德州仪器