丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATES

文件：73.79 Kbytes 页数：5 Pages

TI

德州仪器